Emerging Concepts to Address SP21 Threats Colonel Robert
Emerging Concepts to Address SP21 Threats Colonel Robert Rooster Schmidle Director, Expeditionary Force Development Center (EFDC) Agenda Assured Access Operational Reach Fires Sustaining STOM
Assured Access Sea Power 21 identified the threat of anti-access strategies OIF showed that we cannot assume availability of forward staging bases for a variety of reasons Turkey Kuwait Reinforces the value of Sea Basing Leverages our asymmetric naval advantage
Depth of operations Kuwait to Tikrit Operational Reach Persistence, sustainment, and depth Riverine operations from the sea base Rivers traditionally seen as obstacles Rivers can be seen as opportunities, as alternate avenues of approach For operational maneuver and logistics
Over-the-Horizon (OTH), On-the-Move (OTM) communications Irridium? ISR to support maneuver commanders / decision makers Fires Depth of OIF operation is relevant to envisioned STOM operations STOM envisions persistent indirect fires throughout the battlespace At extreme depth of both OIF and STOM capability gaps exist particularly counter-battery fire
Capability gap partially bridged by EFSS and future NSFS Remaining gap at extreme operational distances may be bridged by development of loitering munitions Sustaining STOM STOM Quick Fuels Concept OEF use of heavy-lift, rotary aircraft specially configured with fuel handling systems that can download fuel from fixed-wing tanker, then return to the ground and refuel ground vehicles and other rotary-wing aircraft
OIF use of FARPs/FOBs Ground forces advanced and secured areas for C-130s and tanker trucks for the refuel of both ground and aviation assets Use of VSTOL
Bose-Einstein condensates and optical lattices (applications) Dieter Jaksch University of Oxford EU networks: OLAQUI, QIPEST System By changing the laser intensity we go slowly from a shallow lattice U¸J to a deep lattice with UÀJ Time dependent Hamiltonian Slow dynamics...
Other voltages of interest are: VGS≥VT0 and VGD=VGS-VDS≥VT0 MOSFET Voltage Characteristics The channel current (drain current ID) is caused by electrons in the channel region traveling from source to drain under the influence of the lateral electric field.
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